The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Dec. 28, 2016
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Jian Min, Beijing, CN;
Xiaolong Li, Beijing, CN;
Zhengyin Xu, Beijing, CN;
Tao Gao, Beijing, CN;
Dong Li, Beijing, CN;
Shuai Zhang, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 21/00 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 27/127 (2013.01); H01L 27/1288 (2013.01); H01L 29/78675 (2013.01);
Abstract
A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The method comprises forming an active layer on a substrate, wherein source-and-drain-to-be-formed regions of the active layer are thicker than a semiconductor region between the source-and-drain-to-be-formed regions, and by a patterning process, forming a gate on the active layer, and forming a pattern of source and drain in the source-and-drain-to-be-formed regions of the active layer.