The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Nov. 08, 2017
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
Inventors:
Mingjue Yu, Shenzhen, CN;
Jangsoon Im, Shenzhen, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1218 (2013.01); H01L 27/1262 (2013.01); H01L 27/3258 (2013.01); H01L 27/3272 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01);
Abstract
A thin film transistor structure is provided with a glass substrate, a buffer layer, a metal oxide semiconductor layer, a gate insulating layer, a gate metal layer, an interlayer insulating layer, a source metal layer, a drain metal layer, and a protective layer. A shielding metal layer is disposed between the glass substrate and the buffer layer, the gate insulating layer has a shielding metal layer contact hole passing through the gate insulating layer and the buffer layer, and the gate metal layer connects with the shielding metal layer through the shielding metal layer contact hole.