The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Oct. 25, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyungin Choi, Seoul, KR;
Taehyeon Kim, Hwaseong-si, KR;
Hongshik Shin, Hwaseong-si, KR;
Taegon Kim, Seoul, KR;
Jaeyoung Park, Yongin-si, KR;
Yuichiro Sasaki, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.