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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10354992 B1

PDFFull Text
Date of Patent:
Jul. 16, 2019

Filed:

Sep. 28, 2017

Semiconductor devices and methods for forming a semiconductor device

Applicant:

Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;

Inventors:

Joachim Weyers, Hoehenkirchen, DE;

Franz Hirler, Isen, DE;

Ahmed Mahmoud, Munich, DE;

Yann Ruet, Villach, AT;

Enrique Vecino Vazquez, Munich, DE;

Assignee:

Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/07 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/36 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0727 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/0692 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/408 (2013.01); H01L 29/45 (2013.01); H01L 29/4966 (2013.01); H01L 29/66106 (2013.01); H01L 29/7808 (2013.01); H01L 29/7811 (2013.01); H01L 29/7821 (2013.01); H01L 29/7823 (2013.01); H01L 29/866 (2013.01); H01L 29/0634 (2013.01); H01L 29/0696 (2013.01);
Abstract

A semiconductor device includes a transistor arrangement and a diode structure. The diode structure is coupled between a gate electrode structure of the transistor arrangement and a source electrode structure of the transistor arrangement. An insulating layer is located vertically between the diode structure and a front side surface of a semiconductor substrate of the semiconductor device. The diode structure includes at least one diode pn-junction. A substrate pn-junction extends from the front side surface of the semiconductor substrate into the semiconductor substrate between a shielding doping region and an edge doping portion. The edge doping portion is located adjacent to the shielding doping region within the semiconductor substrate. At the front side surface of the semiconductor substrate, the substrate pn-junction is located laterally between the diode pn-junction and a source contact region of the diode structure with the source electrode structure.

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Weyers, Joachim. (2019). Semiconductor devices and methods for forming a semiconductor device (U.S. Patent No. 10354992). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10354992

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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