The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Mar. 14, 2018
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
Tomoshige Yunokuchi, Tokyo, JP;
ASAHI KASEI KABUSHIKI KAISHA, Tokyo, JP;
Abstract
It is an object to particularly improve compositions of interlayer insulation films so as to provide semiconductor devices which exert high elongation percentage, are excellent in adherence and are hard to generate a crack, and methods of manufacturing the devices, and a semiconductor device () of the present invention is a semiconductor device provided with a semiconductor element () and a redistribution layer () electrically connected to the semiconductor element, and is characterized in that a solvent with specific gravity of 0.96 g/cmor more at a temperature of 25° C. remains in an amount of 5 ppm or more relative to the entire weight of an interlayer insulation film () inside the interlayer insulation film of the redistribution layer. According to the semiconductor device of the present invention, it is possible to exert high elongation percentage, provide excellent adherence, and suppress generation of a crack.