The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Sep. 28, 2016
Infineon Technologies Ag, Neubiberg, DE;
Thorsten Meyer, Munich, DE;
Werner Schwetlick, Groebenzell, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface, first trenches and second trenches extending from the first surface into the semiconductor body, at least one lateral IGFET including a first load terminal at the first surface, a second load terminal at the first surface and a gate electrode within the first trenches, and at least one vertical IGFET including a first load terminal at the first surface, a second load terminal at the second surface and a gate electrode within the second trenches. The first trenches extend from the first surface into the semiconductor body deeper than a channel zone of the lateral IGFET and confine the channel zone.