The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10354918 B1

Date of Patent:

Jul. 16, 2019

Filed:

Feb. 19, 2019

Contact element structure of a semiconductor device

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventor:

Jim Shih-Chun Liang, Poughkeepsie, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:

Amerson Law Firm, PLLC

Primary Examiner:

Lex H Malsawma

Int. Cl.

CPC ...

H01L 21/77 (2017.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 21/265 (2006.01);

U.S. Cl.

CPC ...

H01L 21/77 (2013.01); H01L 21/02019 (2013.01); H01L 21/02118 (2013.01); H01L 21/2652 (2013.01); H01L 21/76816 (2013.01); H01L 21/823425 (2013.01); H01L 27/12 (2013.01); H01L 27/3253 (2013.01);

Abstract

A contact element structure of a semiconductor device includes an opening positioned in an insulating material layer, the insulating material layer being positioned above a semiconductor substrate, and the opening having an upper sidewall portion, a lower sidewall portion, and a bottom surface portion. An insulating liner portion is positioned within the opening, the insulating liner portion covering the insulating material layer at the upper sidewall portion but not covering the insulating material layer at the lower sidewall portion. A contact liner is positioned within the opening and covers the insulating liner portion, the insulating material layer at the lower sidewall portion, and the insulating material layer at the bottom surface portion, and a conductive material is positioned in the opening and covers the contact liner.

Find Patent Forward Citations

Liang, Jim Shih-Chun. (2019). Contact element structure of a semiconductor device (U.S. Patent No. 10354918). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10354918

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile