The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Nov. 21, 2017
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Salim El Kazzi, Etterbeek, BE;
Clement Merckling, Evere, BE;
Assignee:
IMEC VZW, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/30 (2006.01); H01L 21/02 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 29/46 (2006.01); H01L 21/687 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/54 (2006.01); C30B 23/00 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); C23C 14/0026 (2013.01); C23C 14/0623 (2013.01); C23C 14/30 (2013.01); C23C 14/541 (2013.01); C30B 23/005 (2013.01); C30B 23/025 (2013.01); C30B 23/06 (2013.01); C30B 23/063 (2013.01); C30B 29/46 (2013.01); H01L 21/0242 (2013.01); H01L 21/02381 (2013.01); H01L 21/02387 (2013.01); H01L 21/02422 (2013.01); H01L 21/02631 (2013.01); H01L 21/68764 (2013.01); H01L 21/67248 (2013.01);
Abstract
A method for formation of a transition metal dichalcogenide (TMDC) material layer on a substrate arranged in a process chamber of a molecular beam epitaxy tool is provided. The method includes evaporating metal from a solid metal source, forming a chalcogen-including gas-plasma, and introducing the evaporated metal and the chalcogen-including gas-plasma into the process chamber thereby forming a TMDC material layer on the substrate.