The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Aug. 28, 2017
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Hiroyasu Nagai, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0071 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01);
Abstract

A method for rewriting a semiconductor storage device includes: a first rewriting step of applying a pre-charge voltage to both of a plurality of bit lines and a plurality of source lines; a second rewriting step of applying a rewrite voltage to one of a selected bit line or a selected source line; a third rewriting step of applying a rewrite voltage to both of the selected bit line and the selected source line; a fourth rewriting step of applying a pre-charge voltage to one of the selected bit line or the selected source line; and a fifth rewriting step of applying a pre-charge voltage to both of the selected bit line and the selected source line.


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