The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Sep. 14, 2017
Applicant:
Aspiring Sky Co. Limited, Hong Kong, CN;
Inventors:
Assignee:
Aspiring Sky Co. Limited, Hong Kong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 5/02 (2006.01); G11C 7/12 (2006.01); G11C 7/18 (2006.01); G11C 8/08 (2006.01); G11C 11/419 (2006.01); G06F 12/02 (2006.01); G06F 12/06 (2006.01); G06F 13/16 (2006.01); G11C 8/10 (2006.01); G11C 14/00 (2006.01); G11C 11/418 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G06F 12/0246 (2013.01); G06F 12/0638 (2013.01); G06F 13/1694 (2013.01); G11C 5/025 (2013.01); G11C 7/12 (2013.01); G11C 7/18 (2013.01); G11C 8/08 (2013.01); G11C 8/10 (2013.01); G11C 11/419 (2013.01); G11C 14/0063 (2013.01); G06F 2212/1016 (2013.01); G06F 2212/1028 (2013.01); G06F 2212/205 (2013.01); G06F 2212/7203 (2013.01); G11C 11/418 (2013.01); G11C 14/00 (2013.01); G11C 16/08 (2013.01); Y02D 10/13 (2018.01); Y02D 10/14 (2018.01);
Abstract
Technologies are generally described herein for static random access memory (SRAM) based memory structures and methods thereof such as multi-bit non-volatile static random-access memory (nvSRAM) with arrayed SRAM and NVM or SRAM buffered one time programmable (OTP) memories, RRAMs or other resistive RAMs.