The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Dec. 27, 2017
Applicant:

Aspiring Sky Co. Limited, Hong Kong, CN;

Inventors:

Zhijiong Luo, Hopewell Township, PA (US);

Xiaoming Jin, Shanghai, CN;

Shu Wang, Shanghai, CN;

Zuqu Li, Shanghai, CN;

Assignee:

Aspiring Sky Co. Limited, Hong Kong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 9/44 (2018.01); G06F 9/4401 (2018.01); G06F 1/30 (2006.01); G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G06F 9/4418 (2013.01); G06F 1/305 (2013.01); G06F 9/4403 (2013.01); G06F 12/0238 (2013.01); Y02D 10/13 (2018.01);
Abstract

Memory structures are provided, where a fast SRAM in an mNVSRAM block may serve as the buffer for a large block NVM memory to increase the data exchange rate between computing units or processor cores and the large NVM memory. The mNVSRAM blocks may also provide a fast boot function, where a boot code may be stored in the NVM parts of the mNVSRAM block, and due to the high bandwidth communication between fast SRAM part and the associated NVM memories, the boot code may be transferred into the fast SRAM in one or a few clock cycles enabling fast boot up function. Similarly, code stored in the NVM parts of an mNVSRAM block may be transferred into fast SRAM rapidly at wake-up time enabling fast wake up and voiding a need to wake up any other memory part, which may also result in energy savings for the computing system.


Find Patent Forward Citations

Luo, Zhijiong. (2019). Low power non-volatile sram memory systems (U.S. Patent No. 10353715). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10353715

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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