The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Jan. 27, 2017
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Koji Oda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/1333 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136204 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 1/136209 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); G02F 2001/134372 (2013.01); G02F 2201/121 (2013.01); G02F 2202/02 (2013.01); G02F 2202/10 (2013.01); H01L 29/7869 (2013.01);
Abstract

An array substrate according to the present invention includes a non-linear element. The non-linear element includes a first insulation film disposed so as to cover a light-shielding body, an oxide semiconductor film disposed on the first insulation film so as to overlap the light-shielding body in a plan view, a source electrode and a drain electrode that are disposed so as to be apart from each other with a separation portion therebetween on the oxide semiconductor film, a second insulation film disposed so as to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a first back electrode disposed on a third insulation film and connected to a source wire through a first contact hole. The first back electrode is disposed so as to overlap the source electrode and part of the separation portion on the oxide semiconductor film in a plan view.


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