The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Aug. 11, 2015
Applicant:
Photonics Electronics Technology Research Association, Tokyo, JP;
Inventors:
Kenichiro Yashiki, Tokyo, JP;
Yasuyuki Suzuki, Tokyo, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/01 (2006.01); G02F 1/03 (2006.01); G02F 1/025 (2006.01); G02F 1/035 (2006.01); H04B 10/516 (2013.01);
U.S. Cl.
CPC ...
G02F 1/0356 (2013.01); G02F 1/011 (2013.01); G02F 1/0121 (2013.01); G02F 1/025 (2013.01); G02F 1/0327 (2013.01); G02F 2201/12 (2013.01); H04B 10/516 (2013.01);
Abstract
The purpose of the present invention is to allow a silicon photonics modulator to be operated at high speed with high frequency by providing an electrode structure for the small multichannel high-density silicon photonics modulator. This electrode structure for a silicon photonics modulator includes, on the planar surface of a silicon substrate, a first layer for forming a plurality of bias electrical wirings, and a second layer formed by aligning each of a plurality of ground electrode portions and each electrical wiring in the first layer.