The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Jul. 25, 2016
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G01C 3/08 (2006.01); G01S 7/486 (2006.01); H01L 31/107 (2006.01); H01L 31/0352 (2006.01); H01L 27/146 (2006.01); G01S 17/89 (2006.01); G01S 7/481 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G01S 7/4865 (2013.01); G01S 7/4817 (2013.01); G01S 17/89 (2013.01); H01L 27/14629 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 31/035272 (2013.01); H01L 31/107 (2013.01); H01L 27/0248 (2013.01);
Abstract
A photodetector according to an embodiment includes: a first semiconductor layer of a first conductivity type, including a first surface and a second surface that is opposite to the first surface; a second semiconductor layer of a second conductivity type, disposed on the second surface; and at least one photo-sensing device including a region in the first semiconductor layer, a region in the second semiconductor layer, and a first electrode disposed in a first region of the first surface.