The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Dec. 14, 2016
Massachusetts Institute of Technology, Cambridge, MA (US);
Nicholas Rivera, Cambridge, MA (US);
Ido Kaminer, Cambridge, MA (US);
Bo Zhen, Boston, MA (US);
Marin Soljacic, Belmont, MA (US);
John Joannopoulos, Belmont, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
Ultra-thin conductors are employed to generate plasmon fields near the surface of the conductors. Emitters, such as atoms, molecules, quantum dots, or quantum wells, in the plasmon fields can emit and absorb light via transitions that are otherwise forbidden in the absence of the plasmon fields. Applications using these forbidden transitions include spectroscopy, organic light sources, and broadband light generation. For example, in a spectroscopic platform, an emitter is disposed in the plasmon fields to excite electronic transitions that are otherwise unexcitable. In organic light sources, plasmon fields quench excited triplet states, allowing fast singlet decay with the emission of light. In broadband light generation, strong two-plasmon spontaneous emission of emitters near ultrathin conductors is employed to produce a broad spectrum of light.