The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Dec. 18, 2014
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Arun Keshavamurthy, Bangalore, IN;

Bart van Schravendijk, Cupertino, CA (US);

David Cohen, San Jose, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45565 (2013.01); C23C 16/455 (2013.01); C23C 16/45591 (2013.01); C23C 16/505 (2013.01); Y10T 29/4943 (2015.01);
Abstract

A semiconductor substrate processing apparatus for processing semiconductor substrates includes showerhead module delivering process gas through a faceplate having gas passages therethrough from the process gas source to a processing zone of the processing apparatus wherein individual semiconductor substrates are processed. The showerhead module comprises a gas delivery conduit in fluid communication with a cavity at a lower end thereof, a baffle arrangement in the gas delivery conduit and the cavity, and a blocker plate in the cavity disposed below the baffle arrangement. The baffle arrangement comprises baffles which divide process gas flowing through the gas delivery conduit into center, inner annular, and outer annular flow streams. The center flow stream exits the baffle arrangement above a central portion of the faceplate, the inner annular flow stream exits the baffle arrangement above an inner annular region of the faceplate, and the outer annular flow stream exits the baffle arrangement above an outer annular region of the faceplate.


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