The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Aug. 11, 2011
Applicants:
Alan T. Johnson, Philadelphia, PA (US);
Zhengtang Luo, Rocky Hill, CT (US);
Inventors:
Alan T. Johnson, Philadelphia, PA (US);
Zhengtang Luo, Rocky Hill, CT (US);
Assignee:
The Trustees of the University of Pennsylvania, Philadelphia, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/186 (2017.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 21/285 (2006.01); C01B 32/194 (2017.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
C01B 32/186 (2017.08); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 32/194 (2017.08); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02425 (2013.01); H01L 21/02527 (2013.01); H01L 21/02658 (2013.01); H01L 21/28506 (2013.01); H01L 29/1606 (2013.01); C01B 2204/02 (2013.01); C01B 2204/20 (2013.01); C01B 2204/32 (2013.01); H01L 29/7782 (2013.01);
Abstract
Provided are methods for growing large-size, uniform graphene layers on planarized substrates using Chemical Vapor Deposition (CVD) at atmospheric pressure; graphene produced according to these methods may have a single layer content exceeding 95%. Field effect transistors fabricated by the inventive process have room temperature hole mobilities that are a factor of 2-5 larger than those measured for samples grown on commercially-available copper foil substrates.