The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

May. 13, 2015
Applicant:

Uchicago Argonne, Llc, Chicago, IL (US);

Inventors:

Anirudha V. Sumant, Plainfield, IL (US);

Richard Gulotty, Oak Park, IL (US);

Assignee:

UChicago Argonne, LLC, Chicago, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 31/04 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); H01B 1/04 (2006.01); C23C 16/455 (2006.01); C01B 32/23 (2017.01);
U.S. Cl.
CPC ...
C01B 31/043 (2013.01); C01B 32/23 (2017.08); C23C 16/26 (2013.01); C23C 16/4408 (2013.01); C23C 16/45557 (2013.01); C23C 16/52 (2013.01); H01B 1/04 (2013.01);
Abstract

A method for coating a dielectric substrate with a R-GO film includes positioning the dielectric substrate in a chamber which is purged with a first gas to adjust a pressure of the chamber to a first pressure. A second gas at a second flow rate and a third gas at a third flow rate is inserted into the chamber to increase the chamber pressure to a second pressure greater than the first pressure. A chamber temperature is increased to a first temperature. The flow of the second gas and the third gas is stopped. The chamber is purged to a third pressure higher than the first pressure and lower than the second pressure. The pressure of the chamber is set at a fourth pressure greater than the first pressure and the third pressure. A fourth gas is inserted into the chamber at a fourth flow rate for a first time.


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