The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Apr. 25, 2018
Applicant:

Luxtera, Inc., Carlsbad, CA (US);

Inventors:

Steffen Gloeckner, San Diego, CA (US);

Subal Sahni, La Jolla, CA (US);

Joseph Balardeta, Encinitas, CA (US);

Simon Pang, Carlsbad, CA (US);

Stefan Barabas, West Melbourne, FL (US);

Scott Denton, Carlsbad, CA (US);

Assignee:

Luxtera, Inc., Carlsbad, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/00 (2013.01); H04L 1/24 (2006.01); H04B 10/40 (2013.01); H04B 10/077 (2013.01); H04B 10/80 (2013.01);
U.S. Cl.
CPC ...
H04L 1/243 (2013.01); H04B 10/0779 (2013.01); H04B 10/40 (2013.01); H04B 10/801 (2013.01); H04L 1/244 (2013.01);
Abstract

Methods and systems for an optoelectronic built-in self-test (BIST) system for silicon photonics optical transceivers are disclosed and may include, in an optoelectronic transceiver having a transmit (Tx) path and a receive (Rx) path, where the Rx path includes a main Rx path and a BIST loopback path: generating a pseudo-random bit sequence (PRBS) signal, generating an optical signal in the Tx path by applying the PRBS signal to a modulator, communicating the optical signal to the BIST loopback path and converting to an electrical signal utilizing a photodetector, the photodetector being a replica of a photodetector in the main Rx path, and assessing the performance of the Tx and Rx paths by extracting a PRBS signal from the electrical signal. The transceiver may be a single complementary-metal oxide semiconductor (CMOS) die or in two CMOS die, where a first comprises electronic devices and a second comprises optical devices.


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