The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

May. 14, 2018
Applicant:

Ethertronics, Inc., San Diego, CA (US);

Inventor:

Farbod Aram, Los Altos Hills, CA (US);

Assignee:

Ethertronics, Inc., San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/191 (2006.01); H03G 1/00 (2006.01); H03F 1/32 (2006.01); H03F 3/45 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01); H03F 1/02 (2006.01); H03F 1/26 (2006.01); H03F 1/56 (2006.01);
U.S. Cl.
CPC ...
H03G 1/0029 (2013.01); H03F 1/0205 (2013.01); H03F 1/26 (2013.01); H03F 1/3205 (2013.01); H03F 1/565 (2013.01); H03F 3/193 (2013.01); H03F 3/21 (2013.01); H03F 3/211 (2013.01); H03F 3/4521 (2013.01); H03F 3/45179 (2013.01); H03F 3/45183 (2013.01); H03G 1/0005 (2013.01); H03F 2200/213 (2013.01); H03F 2200/294 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01); H03F 2200/537 (2013.01); H03F 2200/72 (2013.01); H03F 2200/75 (2013.01); H03F 2203/45306 (2013.01); H03F 2203/45481 (2013.01);
Abstract

An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gale of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.


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