The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Mar. 09, 2016
Applicant:

Forschungsverbund Berlin E.v., Berlin, DE;

Inventors:

Jörg Fricke, Berlin, DE;

Götz Erbert, Löbau, DE;

Paul Crump, Berlin, DE;

Jonathan Decker, Berlin, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/12 (2006.01); H01S 5/20 (2006.01); H01S 5/026 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1225 (2013.01); H01S 5/026 (2013.01); H01S 5/1221 (2013.01); H01S 5/1231 (2013.01); H01S 5/2086 (2013.01);
Abstract

Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for outcoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grating operatively connected to the waveguiding region, wherein the grating comprises a plurality of bridges and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grating is non-zero, wherein the coupling parameter P of a trench is defined by the equation, wherein dis a distance of the trench to the active layer, w is a width of the trench and Δn is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.


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