The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Aug. 31, 2017
Eocell Limited, Central, Hong Kong, CN;
Yuriy Matus, Pleasanton, CA (US);
Yongbong Han, San Francisco, CA (US);
Michael Pak, Belmont, CA (US);
EoCell Limited, Hong Kong, HK;
Abstract
A method for producing a volume change compensated (SSLC) material is disclosed. An initially prelithiated SSLC material is produced and delithiated to produce a delithiated SSLC material. Perform at least one iteration involving: (a) re-prelithiating the delithiated SSLC material to produce a re-prelithiated SSLC material; and (b) delithiating the re-prelithiated SSLC material produced in (a). At least one of the following is satisfied: (i) prior to performing the at least one iteration the initially prelithiated SSLC material is essentially completely lithiated; and (ii) at least one iteration produces a re-prelithiated SSLC material that is essentially completely prelithiated. In a final iteration, delithiating the re-prelithiated SSLC material produced in (a) completely delithiates the re-prelithiated SSLC material to produce the volume change compensated SSLC material. The aforesaid process is performed ex situ with respect to fabrication of an anode that contains the produced volume change compensated SSLC material.