The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10347824 B1

Date of Patent:

Jul. 09, 2019

Filed:

Nov. 21, 2017

Composite free layer for magnetoresistive random access memory

Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventor:

Young-Suk Choi, Los Gatos, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:

Kunzler Bean & Adamson, PC

Primary Examiner:

John P Dulka

Int. Cl.

CPC ...

H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/06 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01);

U.S. Cl.

CPC ...

H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01F 10/3204 (2013.01); H01F 10/329 (2013.01); H01L 27/222 (2013.01); H01L 43/06 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); G11C 11/165 (2013.01);

Abstract

Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data includes a fixed layer, a barrier layer, and a composite free layer. A barrier layer is disposed between a fixed layer and a composite free layer. A composite free layer includes a ferromagnetic amorphous layer and an in-plane anisotropy free layer. A spin Hall effect (SHE) layer may be coupled to the composite free layer of the magnetic tunnel junction. The SHE layer may be configured such that an in-plane electric current within the SHE layer causes a spin current in the composite free layer.

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