The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Apr. 17, 2015
Applicant:

Qromis, Inc., Santa Clara, CA (US);

Inventors:

Anthony Lochtefeld, Ipswich, MA (US);

Hugues Marchand, Somerville, MA (US);

Assignee:

Qromis, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/48 (2010.01); C30B 29/06 (2006.01); C30B 33/10 (2006.01); H01L 21/02 (2006.01); H01L 33/32 (2010.01); H01L 33/16 (2010.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01L 33/486 (2013.01); C30B 29/06 (2013.01); C30B 33/10 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02447 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02505 (2013.01); H01L 21/02513 (2013.01); H01L 21/02516 (2013.01); H01L 21/02658 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 33/0079 (2013.01); H01L 33/16 (2013.01); H01S 5/32341 (2013.01);
Abstract

Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.


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