The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Nov. 11, 2015
Lg Innotek Co., Ltd., Seoul, KR;
Chong Cook Kim, Seoul, KR;
LG INNOTEK CO., LTD., Seoul, KR;
Abstract
A light emitting device includes a first conductivity type semiconductor layer including a first conductivity type dopant, an active layer disposed on the first conductivity type semiconductor layer and including a plurality of barrier layers and a plurality of well layers, an electron blocking structure layer disposed on the active layer, and a second conductivity type semiconductor layer disposed on the electron blocking structure layer. The active layer includes a first barrier layer adjacent to the electron blocking structure layer and a first well layer adjacent to the first barrier layer. The plurality of barrier layers include a first conductivity type dopant. The electron blocking structure layer includes a plurality of semiconductor layers including a second conductivity type dopant and AlGaN-based semiconductor. The plurality of semiconductor layers include a first semiconductor layer having a first region adjacent to the first barrier layer. The first region of the first semiconductor layer includes AlGaN-based semiconductor having aluminum composition of 95% or more. A light emitting structure including the active layer and the electron blocking structure layer emits different peak wavelengths.