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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10347785 B1

PDFFull Text
Date of Patent:
Jul. 09, 2019

Filed:

May. 18, 2016

Device for emitting and detecting photons and method of producing the same

Applicant:

Nokia Technologies Oy, Espoo, FI;

Inventors:

Chris Bower, Cambridge, GB;

Piers Andrew, Cambridge, GB;

Richard White, Cambridge, GB;

Assignee:

NOKIA TECHNOLOGIES OY, Espoo, FI;

Attorney:

Alston & Bird LLP

Primary Examiner:

Tucker J Wright

Int. Cl.
CPC ...
H01L 31/12 (2006.01); H01L 31/028 (2006.01); H01L 27/144 (2006.01); H01L 31/0352 (2006.01); A61B 5/00 (2006.01); A61B 5/024 (2006.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 31/18 (2006.01); H01L 33/34 (2010.01); A61B 5/02 (2006.01); A61B 5/1455 (2006.01);
U.S. Cl.
CPC ...
H01L 31/125 (2013.01); A61B 5/0077 (2013.01); A61B 5/02416 (2013.01); A61B 5/7485 (2013.01); H01L 27/1446 (2013.01); H01L 27/156 (2013.01); H01L 31/028 (2013.01); H01L 31/035218 (2013.01); H01L 31/1804 (2013.01); H01L 33/0041 (2013.01); H01L 33/0054 (2013.01); H01L 33/34 (2013.01); A61B 5/02 (2013.01); A61B 5/1455 (2013.01); A61B 2562/0233 (2013.01); A61B 2576/00 (2013.01); Y02E 10/547 (2013.01);
Abstract

A single device for emitting and detecting photons. The device comprises a semiconductive layer (), active material (), further dielectric layer () and overlying electrode (). In a first mode of operation an electrical field is applied between the semiconductive layer () and the overlying electrode (). This enables photons to be emitted from the active material (). In a second mode of operation, the semiconductive layer () constitutes a channel of a field effect transistor (). The field effect transistor further comprises source electrode (), drain electrode (), gate electrode () and dielectric layer (). Photons absorbed by the active material () causes charge to be transferred to the semiconductive layer (), thereby changing the channel resistance. A plurality of such devices can be arranged in a configurable array.

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