The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Aug. 27, 2014
Applicant:

Georgia State University Research Foundation, Inc., Atlanta, GA (US);

Inventors:

A. G. Unil Perera, Mableton, GA (US);

Yanfeng Lao, Atlanta, GA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/109 (2006.01); H01L 31/107 (2006.01); H01L 31/101 (2006.01); H01L 31/0304 (2006.01); H01L 31/147 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 31/03046 (2013.01); H01L 31/101 (2013.01); H01L 31/147 (2013.01);
Abstract

Various examples are provided for hot carrier spectral photodetectors that can be tuned. In one example, among others, a hot-carrier photodetector includes a graded barrier; an absorber disposed on the graded barrier; and a second barrier disposed on the absorber. For example, the absorber can include p-type doped GaAs. The graded barrier is disposed between the absorber and an injector, which can include p-type doped GaAs. In some implementations, the hot-carrier detector can include multiple barriers and absorbers. The hot-carrier photodetector can include an optical source (e.g., a LED) to trigger the VLWIR response in the photodetector.


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