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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10347756 B1

PDFFull Text
Date of Patent:
Jul. 09, 2019

Filed:

Dec. 27, 2017

High-voltage metal-oxide-semiconductor transistor capable of preventing occurrence of exceedingly-large reverse current

Applicant:

Leadtrend Technology Corporation, Zhubei, Hsinchu County, TW;

Inventors:

Kuo-Chin Chiu, Zhubei, TW;

Cheng-Sheng Kao, Zhubei, TW;

Assignee:

LEADTREND TECHNOLOGY CORPORATION, Zhubei, Hsinchu County, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Brandon S Cole

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 27/07 (2006.01); H01L 29/66 (2006.01); H01L 21/82 (2006.01); H01L 21/33 (2006.01); H01L 29/10 (2006.01); H02M 1/08 (2006.01); H02M 7/217 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/782 (2013.01); H01L 29/1095 (2013.01); H01L 29/408 (2013.01); H01L 29/7835 (2013.01); H01L 29/7839 (2013.01); H02M 1/08 (2013.01); H02M 7/217 (2013.01); H01L 29/402 (2013.01); H01L 29/42368 (2013.01);
Abstract

An embodiment of the invention shows a high-voltage MOS field-effect transistor connected in series with a Schottky diode. When the Schottky diode is forwardly biased, the high-voltage MOSFET can act as a switch and sustain a high drain-to-source voltage. When the Schottky diode is reversely biased, the Schottky diode can protect the integrate circuit where the high-voltage MOSFET is formed, because the integrate circuit might otherwise burn out due to an exceedingly-large reverse current.

Find Patent Forward Citations

Chiu, Kuo-Chin. (2019). High-voltage metal-oxide-semiconductor transistor capable of preventing occurrence of exceedingly-large reverse current (U.S. Patent No. 10347756). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10347756

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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