logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10347754 B1

PDFFull Text
Date of Patent:
Jul. 09, 2019

Filed:

Sep. 14, 2017

Power semiconductor device with dv/dt controllability through select trench electrode biasing, and method of manufacturing the same

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Alexander Philippou, Munich, DE;

Christian Jaeger, Munich, DE;

Johannes Georg Laven, Taufkirchen, DE;

Max Christian Seifert, Munich, DE;

Antonio Vellei, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Dicke, Billig & Czaja, PLLC

Primary Examiner:

Marc Anthony Armand

Assistant Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/41 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01); H01L 29/407 (2013.01); H01L 29/41 (2013.01); H01L 29/66348 (2013.01); H01L 29/7396 (2013.01); H01L 29/866 (2013.01); H01L 29/0619 (2013.01);
Abstract

A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.

Find Patent Forward Citations

Philippou, Alexander. (2019). Power semiconductor device with dv/dt controllability through select trench electrode biasing, and method of manufacturing the same (U.S. Patent No. 10347754). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10347754

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…