The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Jun. 12, 2017
Applicant:
Infineon Technologies Dresden Gmbh, Dresden, DE;
Inventors:
Claus Dahl, Dresden, DE;
Dmitri Alex Tschumakow, Dresden, DE;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/732 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66242 (2013.01); H01L 29/0817 (2013.01); H01L 29/0804 (2013.01); H01L 29/41708 (2013.01); H01L 29/6634 (2013.01); H01L 29/7322 (2013.01);
Abstract
Methods for manufacturing a bipolar junction transistor are provided. A method includes providing a semiconductor substrate having a trench isolation, where a pad resulting from a manufacturing of the trench isolation is arranged on the semiconductor substrate, providing an isolation layer on the semiconductor substrate and the pad such that the pad is covered by the isolation layer, removing the isolation layer up to the pad, and selectively removing the pad to obtain an emitter window.
Dahl, Claus. (2019). Heterojunction bipolar transistor fully self-aligned to diffusion region with strongly minimized substrate parasitics and selective pre-structured epitaxial base link (U.S. Patent No. 10347737). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10347737
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile