The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Mar. 15, 2019
Texas Instruments Incorporated, Dallas, TX (US);
Xiaoju Wu, Dallas, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
In at least some embodiments, a semiconductor device comprises a source region is formed within a well. The source region comprises a first dopant type, and the well comprises a second dopant type opposite the first dopant type. A termination region is formed within the well, the termination region being aligned with the source region and having an end adjacent to and spaced apart from an end of the source region. The termination region comprises a semiconducting material having the second dopant type. A preselected concentration value of the dopant in the termination region is greater than a concentration value of the second dopant type in the well.