The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Apr. 27, 2017
Csmc Technologies Fab2 Co., Ltd., Jiangsu, CN;
Zheng Bian, Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
A trench gate structure and a manufacturing method therefor. The trench structure comprises a substrate (), a trench on the surface of the substrate (), an insulating spacer () on the substrate (), a gate oxide layer () on the inner surface of the trench, and a polysilicon gate () on the gate oxide layer (). The insulating spacer () abuts against the trench by means of a slope structure () of the insulating spacer; the polysilicon gate () extends onto the insulating spacer () along the slope structure () in the trench; the insulating spacer () comprises a polysilicon gate pull-up area () that is concave downwards with respect to other parts of the insulating spacer (); the polysilicon gate () extending out of the trench is rested on the polysilicon gate pull-up area ().