The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Mar. 06, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Tomohiro Tamaki, Nonoichi, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Abstract
A semiconductor device according to an embodiment includes a semiconductor layer having first and second planes; first and second electrodes; a first semiconductor region of a first conductivity type in the semiconductor layer; a second semiconductor region of a second conductivity type between the first semiconductor region and the first plane; and a third semiconductor region of the second conductivity type surrounding the second semiconductor region. The third semiconductor region includes a first region, a second region, and a third region. A first region, a second region, and a third region are closer to the second semiconductor region in this order. An amount of second-conductivity-type impurities in the first region, the second region, and the third region is less than that of the second semiconductor region. An amount of second-conductivity-type impurities in the second region is higher than that in the first region and the third region.