The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Oct. 03, 2018
Applicant:

Stmicroelectronics (Research & Development) Limited, Buckinghamshire, GB;

Inventor:

Laurence Stark, Edinburgh, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/763 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 21/763 (2013.01); H01L 21/76224 (2013.01); H01L 21/76237 (2013.01); H01L 27/1461 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01);
Abstract

A charge storage cell includes a semiconductor region having charge carriers of a first conductivity type, a first deep trench isolation structure, and a charge storage region located adjacent to the first deep trench isolation structure. The charge storage region has charge carriers of a second conductivity type different to the first conductivity type and extends along substantially all of the first deep trench isolation structure. A second deep trench isolation structure is located adjacent to the charge storage region and opposite the first deep trench isolation structure.


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