The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Sep. 07, 2017
Toshiba Memory Corporation, Minato-ku, JP;
Yusuke Umezawa, Yokohama, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
A semiconductor memory device includes a substrate, electrode films provided on a first direction side of the substrate and arranged with spacing from each other along the first direction, semiconductor members extending in the first direction, a charge storage member provided between each of the electrode films and each of the semiconductor members, and a control circuit. Memory cells are formed in crossing portions of the electrode films and the semiconductor members. The control circuit classifies the memory cells into a first group and a second group. The control circuit performs writing, reading, and erasing of n-value data (n being an integer of two or more) on the memory cell of the first group. The control circuit performs writing, reading, and erasing of m-value data (m being an integer larger than n) on the memory cell of the second group.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile