The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Jan. 02, 2018
Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Si Hyeon Go, Cheongju-si, KR;

Jae Sik Choi, Cheongju-si, KR;

Myung Ho Park, Cheongju-si, KR;

Dong Seong Oh, Incheon, KR;

Beom Su Kim, Cheongju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4951 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H01L 29/41775 (2013.01); H01L 29/42356 (2013.01); H01L 2224/16245 (2013.01);
Abstract

A multi-chip package of power semiconductor includes a lead frame, a first segment group, a second segment group, a first power semiconductor chip and a second power semiconductor chip. The lead frame includes a first segment group having a first gate segment, a first source segment, and a first drain segment that are separated from each other. The second segment group has a second gate segment, a second source segment, and a second drain segment that are separated from each other. The first power semiconductor chip is formed on the first segment group. The second power semiconductor chip is formed on the second segment group. The first source segment is physically connected to the second drain segment.


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