The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Oct. 31, 2017
The Regents of the University of California, Oakland, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
Methods for achieving sub-lithographic feature sizes in an integrated circuit (IC) layer are provided that use ion implantation to enhance or reduce the etch rate of a thin masking layer. The etch rates also can be enhanced or reduced at specific locations through multiple implantation steps. The implantation can be performed at tilted angles to achieve sub-lithographic implanted regions that are self-aligned to pre-existing photoresist or hard-mask features over the masking layer on the surface of a substrate. A higher density of features can be achieved in an IC layer than are present in an overlying masking layer with the use of ion implantation.