The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Dec. 21, 2017
Infineon Technologies Austria Ag, Villach, AT;
Wolfgang Jantscher, Villach, AT;
Alexander Binter, Villach, AT;
Oliver Blank, Villach, AT;
Petra Fischer, Wernberg, AT;
Ravi Keshav Joshi, Klagenfurt, AT;
Kurt Pekoll, Villach, AT;
Manfred Pippan, Noetsch, AT;
Andreas Riegler, Lichtpold, AT;
Werner Schustereder, Villach, AT;
Juergen Steinbrenner, Noetsch, AT;
Waqas Mumtaz Syed, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least one contact hole, and annealing the semiconductor body to diffuse the recombination center particles in the semiconductor body. Forming the contact electrode includes forming a barrier layer on sections of the semiconductor body uncovered in the at least one contact hole, wherein the barrier layer is configured to inhibit the recombination center particles from diffusing out of the semiconductor body.