The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Sep. 17, 2010
Vinh Q Nguyen, Fairfax, VA (US);
Jesse A. Frantz, Landover, MD (US);
Jasbinder S. Sanghera, Ashburn, VA (US);
Ishwar D. Aggarwal, Fairfax Station, VA (US);
Allan J. Bruce, Scotch Plains, NJ (US);
Michael Cyrus, Summit, NJ (US);
Sergey V. Frolov, New Providence, NJ (US);
Vinh Q Nguyen, Fairfax, VA (US);
Jesse A. Frantz, Landover, MD (US);
Jasbinder S. Sanghera, Ashburn, VA (US);
Ishwar D. Aggarwal, Fairfax Station, VA (US);
Allan J. Bruce, Scotch Plains, NJ (US);
Michael Cyrus, Summit, NJ (US);
Sergey V. Frolov, New Providence, NJ (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Sunlight Photonics Inc., South Plainfield, NJ (US);
Abstract
A method for forming a high purity, copper indium gallium selenide (CIGS) bulk material is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selected from selenium, sulfur, and tellurium, and at least one element from group IIIA of the periodic table, which may be selected from gallium, indium, and aluminum. The sealed reaction vessel is heated to a temperature at which the precursor materials react to form the bulk material. The bulk material is cooled in the vessel to a temperature below the solidification temperature of the bulk material and opened to release the formed bulk material. A sputtering target formed by the method can have an oxygen content of 10 ppm by weight, or less.