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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10347471 B1

PDFFull Text
Date of Patent:
Jul. 09, 2019

Filed:

Nov. 08, 2013

Nbo2 sintered compact, sputtering target comprising the sintered compact, and method of producing nbo2 sintered compact

Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventor:

Satoyasu Narita, Ibaraki, JP;

Assignee:

JX Nippon Mining & Metals Corporation, Tokyo, JP;

Attorney:

Howson & Howson LLP

Primary Examiner:

Michael A Band

Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/08 (2006.01); C04B 35/495 (2006.01); C04B 35/645 (2006.01); C04B 37/02 (2006.01); C01G 33/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); C01G 33/00 (2013.01); C04B 35/495 (2013.01); C04B 35/645 (2013.01); C04B 37/026 (2013.01); C23C 14/083 (2013.01); C23C 14/3414 (2013.01); H01J 37/3435 (2013.01); H01J 37/3491 (2013.01); C01P 2002/72 (2013.01); C01P 2002/74 (2013.01); C01P 2004/03 (2013.01); C01P 2004/61 (2013.01); C01P 2006/10 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/404 (2013.01); C04B 2235/77 (2013.01); C04B 2235/79 (2013.01); C04B 2237/12 (2013.01); C04B 2237/407 (2013.01);
Abstract

The present invention relates to a NbOsintered compact characterized in that the intensity proportion of the X-ray diffraction peak intensity of a (001) plane or (110) plane of NbOrelative to the X-ray diffraction peak intensity of a (400) plane of NbOis 1% or less. The present invention provides, without using an expensive NbOmaterial, a NbOsintered compact that can be applied to a sputtering target for forming a high-quality variable resistance layer for a ReRAM. In particular, it is an object of the present invention to provide a single phase NbOsintered compact having a high density suitable for stabilizing sputtering.

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