The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Dec. 20, 2017
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventor:
Yasuhiro Nojiri, Yokohama, JP;
Assignee:
Toshiba Memory Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0038 (2013.01); G11C 13/003 (2013.01); G11C 13/0023 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 17/165 (2013.01); H01L 27/24 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/15 (2013.01); G11C 2213/72 (2013.01); G11C 2213/75 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a memory cell array and a drive circuit section. The memory cell array includes memory cells. The drive circuit section adapted to control a driving voltage to be supplied to the memory cells. The memory cells each including a first variable resistance film and a second variable resistance film connected in series to the first variable resistance film. The driving voltage of the second variable resistance film is different from the driving voltage of the first variable resistance film.