The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Feb. 02, 2016
Applicants:

Lite-on Electronics (Guangzhou) Limited, Guangzhou, CN;

Lite-on Technology Corporation, Taipei, TW;

Inventors:

Shih-Jia Zeng, Taipei, TW;

Jen-Chien Fu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 16/26 (2006.01); G11C 29/52 (2006.01); G11C 11/56 (2006.01); G11C 16/28 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 11/1068 (2013.01); G11C 16/26 (2013.01); G11C 16/28 (2013.01); G11C 29/52 (2013.01); G11C 16/349 (2013.01); G11C 16/3418 (2013.01);
Abstract

A reading control method for a solid state storage device includes following steps. While the solid state storage device is in an idle mode, a background monitoring operation is performed on the first block and the second block. Consequently, a first optimal read voltage set corresponding to the first block and a second optimal read voltage set corresponding to the second block are acquired. In reading operation, a default read voltage set is provided to the non-volatile memory to read a data of the first block. If a data of the first block is not successfully decoded, a read retry process is performed on the first block and the first optimal read voltage set is provided to the non-volatile memory to read the data of the first block.


Find Patent Forward Citations

Loading…