The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Feb. 01, 2018
Applicant:
Allegro Microsystems, Llc, Manchester, NH (US);
Inventors:
Paolo Campiglio, Arcueil, FR;
Bryan Cadugan, Bedford, NH (US);
Claude Fermon, Orsay, FR;
Rémy Lassalle-Balier, Bures sur Yvette, FR;
Assignees:
Allegro MicroSystems, LLC, Manchester, NH (US);
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01); G01R 33/09 (2006.01); H01F 10/32 (2006.01); H01L 43/08 (2006.01); G01R 33/00 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01F 41/30 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3932 (2013.01); G01R 33/0052 (2013.01); G01R 33/09 (2013.01); G01R 33/093 (2013.01); G01R 33/098 (2013.01); G11B 5/39 (2013.01); G11B 5/3903 (2013.01); G11B 5/3906 (2013.01); G11B 5/3909 (2013.01); G11B 5/3929 (2013.01); H01F 10/3263 (2013.01); H01F 10/3272 (2013.01); H01F 41/306 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); G11B 2005/3996 (2013.01); Y10T 29/41 (2015.01);
Abstract
A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.