The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Feb. 22, 2018
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Ryan D. Bartling, Sunnyvale, CA (US);

Jafar Savoj, Sunnyvale, CA (US);

Daniel J. Fritchman, San Francisco, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/24 (2006.01); G05F 3/26 (2006.01);
U.S. Cl.
CPC ...
G05F 3/247 (2013.01); G05F 3/262 (2013.01);
Abstract

A reference voltage generation circuit (or bandgap circuit) having a flipped-gate transistor is disclosed. A bandgap circuit according to the disclosure includes first, second, third and fourth transistors. The first transistor is a flipped-gate transistor having a gate terminal of an opposite polarity (e.g., an n-channel metal oxide semiconductor, or NMOS, transistor having a gate terminal with a p-type polysilicon implant). The second third and fourth transistors have a corresponding type polysilicon implants (e.g., NMOS transistors having respective gate terminals with an n-type polysilicon implant). The circuit is configured to generate a reference voltage equal to a sum of gate-source voltages of the first and third transistors, minus respective gate-source voltages of the second and fourth transistors.


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