The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2019

Filed:

Dec. 10, 2015
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Yang An, Beijing, CN;

Zhilong Peng, Beijing, CN;

Wukun Dai, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/20 (2006.01); H01L 27/10 (2006.01); G02F 1/1343 (2006.01); H01L 23/58 (2006.01); H01L 27/12 (2006.01); C23C 14/04 (2006.01); C23C 14/06 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13439 (2013.01); C23C 14/042 (2013.01); C23C 14/0605 (2013.01); C23C 14/086 (2013.01); C23C 14/34 (2013.01); G02F 1/134309 (2013.01); G03F 7/0035 (2013.01); H01L 23/585 (2013.01); H01L 27/124 (2013.01); G02F 2201/123 (2013.01);
Abstract

The present disclosure provides a method for manufacturing a slit electrode, the slit electrode, and a display panel. The method includes steps of forming a first photoresist pattern on a passivation layer, the first photoresist pattern being of a shape identical to a slit of the slit electrode, forming a slit electrode pattern on the passivation layer with the first photoresist pattern, the slit electrode pattern being covering with a second photoresist pattern which has a shape identical to the slit electrode; and removing the first photoresist pattern and the second photoresist pattern.


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