The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Mar. 22, 2017
National Sun Yat-sen University, Kaohsiung, TW;
National Sun Yat-Sen University, Kaohsiung, TW;
Abstract
An III-nitride epitaxial structure and a method for manufacturing the same are disclosed. The III-nitride epitaxial structure includes a gallium nitride layer, an indium gallium nitride layer, and an indium nitride layer. The gallium nitride layer includes an M-plane gallium nitride surrounding a c-plane gallium nitride thereof. The indium gallium nitride layer is arranged on the gallium nitride layer. The indium gallium nitride layer includes an M-plane indium gallium nitride surrounding a c-plane indium gallium nitride thereof. The indium nitride layer is arranged on the indium gallium nitride layer. The indium nitride layer includes an M-plane indium nitride surrounding a c-plane indium nitride thereof. The c-plane gallium nitride, the c-plane indium gallium nitride, and the c-plane indium nitride are stacked each other to form a neck portion that is connected to a thin c-plane indium nitride disk which is spaced from the M-plane indium nitride by a gap.