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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10344373 B1

PDFFull Text
Date of Patent:
Jul. 09, 2019

Filed:

Sep. 21, 2016

Process for producing a target formed of a sintering-resistant material of a high-melting point metal alloy, silicide, carbide, nitride or boride

Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventor:

Yasuhiro Yamakoshi, Ibaraki, JP;

Assignee:

JX Nippon Mining & Metals Corporation, Tokyo, JP;

Attorney:

Howson & Howson LLP

Primary Examiner:

Jie Yang

Int. Cl.
CPC ...
B22F 3/24 (2006.01); C23C 14/34 (2006.01); C04B 37/02 (2006.01); C23C 14/06 (2006.01); B22F 3/16 (2006.01); B22F 7/04 (2006.01); C23C 14/14 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B22F 3/162 (2013.01); B22F 3/24 (2013.01); B22F 7/04 (2013.01); C04B 37/026 (2013.01); C23C 14/067 (2013.01); C23C 14/0635 (2013.01); C23C 14/0641 (2013.01); C23C 14/0682 (2013.01); C23C 14/14 (2013.01); H01J 37/3426 (2013.01); B22F 2003/247 (2013.01); B22F 2007/045 (2013.01); B22F 2302/05 (2013.01); B22F 2302/10 (2013.01); B22F 2302/20 (2013.01); B22F 2302/45 (2013.01); B22F 2303/01 (2013.01); B22F 2998/10 (2013.01); C04B 2237/121 (2013.01); C04B 2237/36 (2013.01); C04B 2237/403 (2013.01); C04B 2237/706 (2013.01); C04B 2237/708 (2013.01);
Abstract

A target is formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target are bonded. A production method of such a target is provided. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.

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