The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

Mar. 01, 2017
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Junji Hirase, Osaka, JP;

Yoshihiro Sato, Osaka, JP;

Yoshinori Takami, Toyama, JP;

Masayuki Takase, Osaka, JP;

Masashi Murakami, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/359 (2011.01); H04N 5/361 (2011.01); H04N 5/363 (2011.01); H04N 5/369 (2011.01); H01L 27/146 (2006.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/361 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H04N 5/359 (2013.01); H04N 5/363 (2013.01); H04N 5/3698 (2013.01); H04N 5/3745 (2013.01);
Abstract

An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.


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