The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Apr. 26, 2016
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Inventors:
Keiichiro Geshi, Osaka, JP;
Shigeru Nakayama, Osaka, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/25 (2006.01); C04B 35/111 (2006.01); B32B 9/00 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/08 (2006.01); H03H 3/08 (2006.01); B32B 18/00 (2006.01); C04B 35/053 (2006.01); C04B 35/057 (2006.01); C04B 35/14 (2006.01); C04B 35/185 (2006.01); C04B 35/195 (2006.01); C04B 35/443 (2006.01); C04B 35/46 (2006.01); C04B 35/495 (2006.01); C04B 35/565 (2006.01); C04B 35/581 (2006.01); C04B 35/587 (2006.01);
U.S. Cl.
CPC ...
H03H 9/25 (2013.01); B32B 9/005 (2013.01); B32B 18/00 (2013.01); C04B 35/053 (2013.01); C04B 35/057 (2013.01); C04B 35/111 (2013.01); C04B 35/14 (2013.01); C04B 35/185 (2013.01); C04B 35/195 (2013.01); C04B 35/443 (2013.01); C04B 35/46 (2013.01); C04B 35/495 (2013.01); C04B 35/565 (2013.01); C04B 35/581 (2013.01); C04B 35/587 (2013.01); H03H 3/08 (2013.01); H03H 9/02543 (2013.01); H03H 9/02559 (2013.01); H03H 9/02574 (2013.01); H03H 9/02669 (2013.01); H03H 9/058 (2013.01); H03H 9/08 (2013.01); B32B 2307/20 (2013.01); B32B 2457/00 (2013.01); C04B 2235/3203 (2013.01); C04B 2235/963 (2013.01); C04B 2237/34 (2013.01); C04B 2237/341 (2013.01); C04B 2237/343 (2013.01); C04B 2237/345 (2013.01);
Abstract
A ceramic substrate is formed of a polycrystalline ceramic and has a supporting main surface. The supporting main surface has a roughness of 0.01 nm or more and 3.0 nm or less in terms of Sa. The number of projections and depressions with a height of 1 nm or more in a square region with 50 μm sides on the supporting main surface is less than 5 on average, and the number of projections and depressions with a height of 2 nm or more in the square region is less than 1 on average.