The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Sep. 07, 2018
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Takumi Fujimoto, Nagano, JP;
Mikiya Chounabayashi, Nagano, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/537 (2006.01); H02M 1/38 (2007.01); H01L 27/06 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H02M 7/537 (2013.01); H01L 27/0629 (2013.01); H01L 29/1608 (2013.01); H02M 1/38 (2013.01);
Abstract
The inverter circuit has a first silicon carbide MOSFET and a second silicon carbide MOSFET connected in series and external freewheel diodes respectively connected in anti-parallel to the first and second MOSFETs. The inverter circuit is configured such that during a deadtime when the first silicon carbide MOSFET and the second silicon carbide MOSFET are OFF and freewheeling current starts flowing, a pulse width of a transient current flowing to a built-in diode of the first silicon carbide MOSFET or a built-in diode of the second silicon carbide MOSFET is less than 2 μs.